標題: 三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( II )
Studies of through Silicon VI a (Tsv) and Other Key Technologies in Three-Dimensional Integrated Circuit (3d Ic) with Stress Analysis and Thermal Conductivity Modeling
作者: 陳冠能
CHEN KUAN-NENG
國立交通大學電子工程學系及電子研究所
關鍵字: 三維積體電路晶片;矽穿孔;晶圓薄化;晶圓接合;異質接合;金屬接合;附著層;3D IC;TSV;wafer thinning;wafer bonding;hybrid bonding;metal bonding;adhesion layer
公開日期: 2011
官方說明文件#: NSC100-2628-E009-010
URI: http://hdl.handle.net/11536/99309
https://www.grb.gov.tw/search/planDetail?id=2360021&docId=373806
Appears in Collections:Research Plans