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顯示 21 到 40 筆資料，總共 44 筆 < 上一頁   下一頁 >
公開日期標題作者
2007Effect of UV illumination on inverted-staggered a-Si : H thin film transistorsLi, Yiming; Lou, Jen-Chung; Chen, Chung-Le; Hwang, Chih-Hong; Yan, Shuoting; 電信工程研究所; Institute of Communications Engineering
2009Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect RatioCheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
15-七月-2009The geometric effect and programming current reduction in cylindrical-shaped phase change memoryLi, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Cheng, Hui-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2008High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random DopantsLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
1-五月-2010The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuitHan, Ming-Hung; Li, Yiming; Hwang, Chih-Hong; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-六月-2008Large-scale "atomistic" approach to discrete-dopant-induced characteristic fluctuations in silicon nanowire transistorsLi, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; 電信工程研究所; Institute of Communications Engineering
2010Large-Scale Atomistic Circuit-Device Coupled Simulation of Discrete-Dopant-Induced Characteristic Fluctuation in Nano-CMOS Digital CircuitsLi, Yiming; Hwang, Chih-Hong; 電信工程研究所; Institute of Communications Engineering
2007Numerical simulation of nanoscale multiple-gate devices including random impurity effectHwang, Chih-Hong; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
2007Numerical simulation of static noise margin for a six-transistor static random access memory cell with 32nm fin-typed field effect transistorsLi, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; 電信工程研究所; Institute of Communications Engineering
2009Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET DevicesLi, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-二月-2010Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS TechnologiesLi, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2009Process-Variation- and Random-Dopant-Induced Static Noise Margin Fluctuation in Nanoscale CMOS and FinFET SRAM CellsLi, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-三月-2009Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devicesLi, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
2009Propagation Delay Dependence on Channel Fins and Geometry Aspect Ratio of 16-nm Multi-Gate MOSFET InverterCheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming; 電信工程研究所; Institute of Communications Engineering
1-八月-2009Random-Dopant-Induced Variability in Nano-CMOS Devices and Digital CircuitsLi, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; 電信工程研究所; Institute of Communications Engineering
2008Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS CircuitLi, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; Huang, Hsuan-Ming; Li, Tien-Yeh; Cheng, Hui-Wen; 電信工程研究所; Institute of Communications Engineering
5-三月-2010Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuationsLi, Yiming; Hwang, Chih-Hong; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
2009Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS CircuitsHwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; Lee, Kuo-Fu; Cheng, Hui-Wen; Li, Yiming; 傳播研究所; Institute of Communication Studies
1-五月-2010Statistical variability in FinFET devices with intrinsic parameter fluctuationsHwang, Chih-Hong; Li, Yiming; Han, Ming-Hung; 傳播研究所; 電機工程學系; Institute of Communication Studies; Department of Electrical and Computer Engineering
1-九月-2008Temperature dependence on the contact size of GeSbTe films for phase change memoriesLi, Yiming; Yu, Shao-Ming; Hwang, Chih-Hong; Kuo, Yi-Ting; 資訊工程學系; 電信工程研究所; Department of Computer Science; Institute of Communications Engineering
顯示 21 到 40 筆資料，總共 44 筆 < 上一頁   下一頁 >