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公開日期標題作者
1-十二月-2010Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etchingChen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
14-一月-2018Microscopic evidence for the dissociation of water molecules on cleaved GaN(1(1)over bar00)Wu, Shih-Yu; Lang, Liang-Wei; Cai, Pei-Yang; Chen, Yun-Wen; Lai, Yu-Ling; Lin, Ming-Wei; Hsu, Yao-Jane; Lee, Wei-I; Kuo, Jer-Lai; Luo, Meng-Fan; Kuo, Chien-Cheng; 電子物理學系; Department of Electrophysics
1-四月-2008Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser depositionHo, Yen-Teng; Liang, Mei-Hui; Hsiao, Feng-Ke; Wang, Wei-Lin; Peng, Chun-Yen; Chen, Wei-Da; Lee, Wei-I; Chang, Li; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-十一月-2008A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase EpitaxyHuang, Hsin-Hsiung; Chen, Kuei-Ming; Tu, Li-Wei; Chu, Ting-Li; Wu, Pei-Lun; Yu, Hung-Wei; Chiang, Chen-Hao; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-六月-2007Preparation of extended microtunnels in GaN by wet chemical etchingHuang, Hsin-Hsiung; Zeng, Hung-Yu; Lee, Wei-I; 電子物理學系; Department of Electrophysics
二月-2016Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitorChu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi; 材料科學與工程學系; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-八月-2013A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase EpitaxyWu, Yin-Hao; Lee, Chuo-Han; Chu, Chung-Ming; Yeh, Yen-Hsien; Chen, Chan-Lin; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-五月-2009Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structureHuang, Hsin-Hsiung; Chao, Chu-Li; Chi, Tung-Wei; Chang, Yu-Lin; Liu, Po-Chun; Tu, Li-Wei; Tsay, Jenq-Dar; Kuo, Hao-Chung; Cheng, Shun-Jen; Lee, Wei-I; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2010Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase EpitaxyChen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Gao, Zhong-Shan; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
7-二月-2019Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular MaskHuang, Chang-Hsun; Pakzad, Anahita; Lee, Wei-I; Chou, Yi-Chia; 電子物理學系; Department of Electrophysics
2000Study the Al-oxide/GaAs Interface Characteristics by Spectral Response of GaAs Solar CellsLee, Shih-Chang; Wen, Tzu-Chi; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-八月-2015Use of hydrogen etching to remove existing dislocations in GaN epitaxial layersYeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-五月-2007Using planarized p-GaN layer to reduce electrostatic discharged damage in nitride-based light-emitting diodeLee, Chi-Ling; Lee, Wei-I; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
2010以氫化物氣相磊晶成長非極性氮化鎵基板之研究楊祐任; Yang, Yu-Jen; 李威儀; Lee, Wei-I; 電子物理系所
2008以氫化物氣相磊晶技術在獨立式氮化鎵基板上再成長氮化鎵厚膜高仲山; Gao, Zhong-Shan; 李威儀; Lee, Wei-I; 電子物理系所
2013以氫化物氣相磊晶法在獨立式氮化鎵基板氮極性面再成長之研究陳彥甫; Chen, Yan-Fu; 李威儀; Lee, Wei-I; 電子物理系所
2015利用侷域表面電漿共振提升氮化鎵MSM光偵測器效能郭巧涵; Kuo, Chiao-Han; 李威儀; Lee, Wei-I; 電子物理系所
2015利用分子束磊晶法在氮極性面與鎵極性面之氮化鎵上成長異質結構CuInSe2之特性研究李卓翰; Lee, Chuo-Han; 李威儀; Lee, Wei-I; 電子物理系所
2008利用奈米壓印微影及氫化物氣相磊晶技術成長氮化鎵之研究葉偉誠; Yeh, Wei-Cheng; 李威儀; Lee, Wei-I; 電子物理系所
2015利用氫化物氣相磊晶法在物理氣相沉積氮化鋁的緩衝層上成長氮化鎵厚膜之研究孫晟淵; Sun, Chen-Yuan; 李威儀; Lee, Wei-I; 電子物理系所
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