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公開日期標題作者
1-十一月-2011Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor DepositionBinh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2011Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor DepositionBinh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2014Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface TreatmentsLuc, Quang-Ho; Chang, Edward Yi; Trinh, Hai-Dang; Wong, Yuen-Yee; Do, Huy-Binh; Lin, Yueh-Chin; Wang, Sheng-Ping; Yang, Min-Chieh; Wu, Hsing-Chen; Chen, Ke-Hung; Liao, Yi-Hsien; Tu, Sheng-Hung; 材料科學與工程學系; 電機工程學系; Department of Materials Science and Engineering; Department of Electrical and Computer Engineering
三月-2014Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxyWu, Yue-Han; Wong, Yuen-Yee; Chen, Wei-Chun; Tsai, Dung-Sheng; Peng, Chun-Yen; Tian, Jr-Sheng; Chang, Li; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2015Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistorsHuang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsHai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
1-八月-2013Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor StructuresTrinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
7-十月-2013Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistorsWong, Yuen-Yee; Chen, Yu-Kong; Maa, Jer-Shen; Yu, Hung-Wei; Tu, Yung-Yi; Dee, Chang-Fu; Yap, Chi-Chin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
1-一月-2020Low resistive InGaN film grown by metalorganic chemical vapor depositionShrestha, Niraj Man; Chauhan, Prerna; Wong, Yuen-Yee; Li, Yiming; Samukawa, Seiji; Chang, Edward Yi; 交大名義發表; 材料科學與工程學系; 電機工程學系; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electrical and Computer Engineering
1-六月-2008Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAsSahoo, Kartika Chandra; Chang, Chun-Wei; Wong, Yuen-Yee; Hsieh, Tung-Ling; Chang, Edward Yi; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2012The Parasitic Reaction During the MOCVD Growth of AlInN MaterialHuang, Wei-Ching; Wong, Yuen-Yee; Liu, Kusan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
一月-2017Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor depositionHsiao, Chih-Jen; Minh-Thien-Huu Ha; Liu, Chun-Kuan; Hong-Quan Nguyen; Yu, Hung-Wei; Chang, Sheng-Po; Wong, Yuen-Yee; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics
1-四月-2018Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVDLuong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
二月-2016Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitorChu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi; 材料科學與工程學系; 電子物理學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2010The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBEWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-六月-2012Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowiresChong, Su Kong; Goh, Boon Tong; Wong, Yuen-Yee; Nguyen, Hong-Quan; Do, Hien; Ahmad, Ishaq; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2011Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAsLin, Y. C.; Shie, Sheng-Li; Shie, Tin-En; Wong, Yuen-Yee; Chen, K. S.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-2012Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor DepositionHong-Quan Nguyen; Chang, Edward Yi; Yu, Hung-Wei; Hai-Dang Trinh; Dee, Chang-Fu; Wong, Yuen-Yee; Hsu, Ching-Hsiang; Binh-Tinh Tran; Chung, Chen-Chen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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