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公開日期標題作者
2010High Performance Ultra-Low Energy RRAM with Good Retention and EnduranceCheng, C. H.; Tsai, C. Y.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2011High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thicknessChen, W. B.; Cheng, C. H.; Lin, C. W.; Chen, P. C.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface TreatmentCheng, C. H.; Hsu, H. H.; Hsieh, I. J.; Deng, C. K.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2010High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO(3) Gate DielectricsChen, W. B.; Cheng, C. H.; Chin, Albert; 光電學院; 電子工程學系及電子研究所; College of Photonics; Department of Electronics Engineering and Institute of Electronics
1-十二月-2010High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate DielectricsChen, W. B.; Cheng, C. H.; Chin, Albert; 光電學院; 電子工程學系及電子研究所; College of Photonics; Department of Electronics Engineering and Institute of Electronics
2008High-Performance MIM Capacitors Using a High-kappa TiZrO DielectricCheng, C. H.; Pan, H. C.; Lin, S. H.; Hsu, H. H.; Hsiao, C. N.; Chou, C. P.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2007High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuningChiang, K. C.; Cheng, C. H.; Pan, H. C.; Hsiao, N.; Chou, C. P.; Chin, Albert; Hwang, H. L.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2010Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitorsCheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2010Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitorsCheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-十一月-2010Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retentionTsai, C. Y.; Lee, T. H.; Cheng, C. H.; Chin, Albert; Wang, Hong; 電機工程學系; Department of Electrical and Computer Engineering
1-七月-2012Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxideCheng, C. H.; Chen, P. C.; Wu, Y. H.; Wu, M. J.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
2010Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and EnduranceTsai, C. Y.; Lee, T. H.; Chin, Albert; Wang, Hong; Cheng, C. H.; Yeh, F. S.; 電機工程學系; Department of Electrical and Computer Engineering
1-六月-2018The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image SensorFan, C. C.; Chiu, Y. C.; Liu, C.; Lai, W. W.; Cheng, C. H.; Lin, D. L.; Li, G. R.; Lo, Y. H.; Chang, C. W.; Tsai, C. C.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrodeCheng, C. H.; Pan, H. C.; Yang, H. J.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
2008Improved Lower Electrode Oxidation of High-kappa TiCeO Metal-Insulator-Metal Capacitors by Using a Novel Plasma TreatmentCheng, C. H.; Hsu, H. H.; Deng, C. K.; Chin, Albert; Chou, C. P.; 機械工程學系; Department of Mechanical Engineering
1-十月-2008Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrodeCheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
2016Incorporation Behaviors of In and Ga in the Two-Heater MOVPE Growth of InGaN FilmsFu, S. F.; Cheng, C. H.; Lee, F. W.; Chen, S. Y.; Liao, B. W.; Chou, W. C.; Chen, W. K.; Ke, W. C.; 電子物理學系; Department of Electrophysics
1-一月-2017Investigation of Electrical Characteristics on 25-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate DielectricLin, M. H.; Lin, Y. C.; Lin, Y. S.; Sun, W. J.; Chen, S. H.; Chiu, Y. C.; Cheng, C. H.; Chang, C. Y.; 光電系統研究所; 電子工程學系及電子研究所; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM CapacitorsCheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM CapacitorsCheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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