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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
8-Jan-1996A bilayer Ti/Ag ohmic contact for highly doped n-type GaN filmsGuo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
24-Jun-1996The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerLin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-Jul-1999Electrical properties of multiple high-dose Si implantation in p-GaNLai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Nov-1999Electrical properties of the Si implantation in Mg doped p-GaNLai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; 光電工程學系; Department of Photonics
1-Oct-1998Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor depositionLai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Growth and characterizations of GaN on SiC substrates with buffer layersLin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Sep-1997Growth and characterizations of GaN on SiC substrates with buffer layersLin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Apr-1996High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5PChai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresTsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY; 交大名義發表; National Chiao Tung University
12-May-1997Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresLin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
12-May-1997Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructuresLin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Jul-1996Reactive ion etching of GaN with BCl3/SF6 plasmasFeng, MS; Guo, JD; Lu, YM; Chang, EY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jul-1996Reactive ion etching of GaN with BCl3/SF6 plasmasFeng, MS; Guo, JD; Lu, YM; Chang, EY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Aug-1996Schottky contact and the thermal stability of Ni on n-type GaNGuo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1999Study of a common deep level in GaNWen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS; 電子物理學系; Department of Electrophysics
1995Study of Schottky barriers on n-type GaN grown by LP-MOCVDGuo, JD; Feng, MS; Pan, FM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-Jun-1996X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layersLee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 17 of 17