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Issue DateTitleAuthor(s)
2004A 1.8 V, 10 Gbps fully integrated CMOS optical receiver analog front endChen, WZ; Cheng, YL; Lin, DS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-endChen, WZ; Cheng, YL; Lin, DS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1997Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor depositionLin, DS; Miller, T; Chiang, TC; 物理研究所; Institute of Physics
20-May-2005Atomistic view of the recombinative desorption of H(2) from H/Si(100)Ferng, SS; Lin, CT; Yang, KM; Lin, DS; Chiang, TC; 物理研究所; Institute of Physics
20-May-2005Atomistic view of the recombinative desorption of H-2 from H/Si(100)Ferng, SS; Lin, CT; Yang, KM; Lin, DS; Chiang, TC; 物理研究所; Institute of Physics
31-Jan-2003Atomistics of Ge deposition on Si(100) by atomic layer epitaxyLin, DS; Wu, JL; Pan, SY; Chiang, TC; 物理研究所; Institute of Physics
15-Dec-2001Chlorine-induced Si surface segregation on the Ge-terminated Si/Ge(100) surface from core-level photoemissionLin, DS; Pan, SY; Wu, MW; 物理研究所; Institute of Physics
26-May-2006Comment on "Atomistic view of the recombinative desorption of H-2 from H/Si(100)" - ReplyLin, DS; Chiang, TC; 物理研究所; Institute of Physics
20-Jun-2001Comparison of thermal reactions of phosphine on Ge(100) and Si(100) by high-resolution core-level photoemissionTsai, HW; Lin, DS; 物理研究所; Institute of Physics
15-Dec-1996Coverage-dependent thermal reactions of digermane on Si(100)-(2x1)Lin, DS; Huang, KH; Pi, TW; Wu, RT; 物理研究所; Institute of Physics
20-May-2000Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopyChen, RP; Lin, DS; 物理研究所; Institute of Physics
1-Mar-2006Evolution of two-dimensional structure phase transitions (3 x 1) -> (2 x 1) and (1 x 1) -> (2 x 1) on hydrogen-terminated Si(100) surfaceFerng, SS; Lin, CT; Yang, KM; Hsieh, MF; Lin, DS; 物理研究所; Institute of Physics
2000Gallium K-edge EXAFS study of GaN : Mg filmsPan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1-Jan-2001Gallium K-edge x-ray absorption study on Mg-doped GaNPan, YC; Wang, SF; Lee, WH; Lee, MC; Chen, WK; Chen, WH; Jang, LY; Lee, JF; Chiang, CI; Chang, H; Wu, KT; Lin, DS; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
15-May-1998Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical-vapor depositionWu, PH; Lin, DS; 物理研究所; Institute of Physics
15-Aug-1997Growth process of Ge on Si(100)-(2x1) in atomic-layer epitaxy from Ge2H6Huang, KH; Ku, TS; Lin, DS; 物理研究所; Institute of Physics
15-Sep-1999Hydrogen-desorption kinetic measurement on the Si(100)-2x1 : H surface by directly counting desorption sitesLin, DS; Chen, RP; 物理研究所; Institute of Physics
1-Feb-1999Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxyPan, YC; Lee, WH; Shu, CK; Lin, HC; Chiang, CI; Chang, H; Lin, DS; Lee, MC; Chen, WK; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
15-Jan-2000Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning tunneling microscopyLin, DS; Ku, TS; Chen, RP; 物理研究所; Institute of Physics
1-Feb-1998Real-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitionsLin, DS; Wu, PH; 物理研究所; Institute of Physics
Showing results 1 to 20 of 25  next >