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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1-一月-2011Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS CapacitorsKanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
1-一月-2017Dielectrics for MOS Integrated CircuitsIwai, H.; 國際半導體學院; International College of Semiconductor Technology
2010Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor CharacteristicsChang, Chia-Hua; Shie, Tin-En; Lin, Yueh-Chin; Kakushima, K.; Iwai, H.; Lu, Po-Ching; Lin, Ting-Chun; Huang, Guan Ning; Chang, Edward Yi; 交大名義發表; National Chiao Tung University
2009Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS StructureFunamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
1-六月-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2016Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate InsulatorLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
2016Evaluation of GaN HEMT with Field Plate for Reliability ImprovementLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Chin, P. C.; Hsu, H. T.; Hsieh, T. E.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-一月-2018First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate StackLuc, Q. H.; Fan-Chiang, C. C.; Huynh, S. H.; Huang, P.; Do, H. B.; Ha, M. T. H.; Jin, Y. D.; Nguyen, T. A.; Zhang, K. Y.; Wang, H. C.; Lin, Y. K.; Lin, Y. C.; Hu, C.; Iwai, H.; Chang, E. Y.; 交大名義發表; National Chiao Tung University
1-七月-2011Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniquesZade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2011Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniquesZade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 材料科學與工程學系; Department of Materials Science and Engineering
2016Optimization of gate insulator material for GaN MIS-HEMTLin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 12 筆資料，總共 12 筆