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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1-八月-2014Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETsYu, Chang-Hung; Su, Pin; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2015Electrical Characteristic of InGaAs Multiple-Gate MOSFET DevicesHuang, Cheng-Hao; Li, Yiming; 交大名義發表; 傳播研究所; 電機學院; National Chiao Tung University; Institute of Communication Studies; College of Electrical and Computer Engineering
1-三月-2018In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma TreatmentLuc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電機學院; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2015Investigation and Benchmark of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETsYu, Chang-Hung; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Ultra-broadband THz field detection by ion-implanted III-VPC antennaPan, CL; 光電工程學系; Department of Photonics
2005奈米磷化銦之合成與特性鑑定蘇怡今; 陳登銘; 應用化學系碩博士班
2018應用於後互補式金屬氧化物半導體之低功率高介電係數/三五族金屬氧化物半導體元件閘極金屬堆疊之研究杜輝平; 張翼教授; Do, Huy Binh; Chang, Edward Yi; 材料科學與工程學系所
2009結合高介電質材料與三五族半導體之金氧半電容研究宋先敏; Sung, Hsien-Ming; 張翼; Chang, Yi; 材料科學與工程學系
2016超薄絕緣層異質三五族與鍺通道金氧半場效電晶體及單層與多層二維過渡金屬硫屬化合物之邏輯電路及靜態隨機存取記憶體之研究與分析余昌鴻; 蘇彬; Yu, Chang-Hung; Su, Pin; 電子研究所
2010銻化物高電子遷移率電晶體研究李孟穎; Li, Meng-Ying; 李建平; Lee, Chien-Ping; 電子研究所
2017高介電材料應用於金氧半電容之特性分析盧晞婕; 林建中; Lu,Hsi-Chieh; Lin,Chien-Chung; 照明與能源光電研究所
2011高效能增強型砷化鎵金氧半場效電晶體元件黃昶智; Huang, Chang-Chih; 簡昭欣; Chien, Chao-Hsin; 電子研究所
顯示 1 到 12 筆資料，總共 12 筆