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公開日期標題作者
1-一月-2018Effects of Electric Fields on the Switching Properties Improvements of RRAM Device With a Field-Enhanced Elevated-Film-Stack StructureChuang, Kai-Chi; Lin, Kuan-Yu; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Chu, Chi-Yan; Cheng, Huang-Chung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005High-perfomance nonvolatile HfO2 nanocrystal memoryLin, YH; Chien, CH; Lin, CT; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2003High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memoryChien, CH; Wang, DY; Yang, MJ; Lehnen, P; Leu, CC; Chuang, SH; Huang, TY; Chang, CY; 交大名義發表; National Chiao Tung University
1-一月-2019Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect TransistorCheng, Chun-Hu; Fan, Chia-Chi; Tu, Chun-Yuan; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Improved reliability of HfO2/SiON gate stack by fluorine incorporationLu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
九月-2016Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma TreatmentTsai, Ming-Li; Ko, Jun-Yu; Wang, Shin-Yuan; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping LayerLiu, Kuan-Wei; Chen, Hsuan-Han; Huang, Zhong-Ying; Wang, Wei-Chun; Fan, Yu-Chi; Lin, Ching-Liang; Hsu, Chih-Chieh; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; Lin, Chien-Chung; Cheng, Chun-Hu; 交大名義發表; 電子物理學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-三月-2012Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash MemoryLin, Yu-Hsien; Chien, Chao-Hsin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2007Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping methodWu, Wei-Hao; Tsui, Bing-Yue; Chen, Mao-Chieh; Hou, Yong-Tian; Jin, Yin; Tao, Hun-Jan; Chen, Shih-Chang; Liang, Mong-Song; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009二氧化鉿薄膜電阻式隨機存取記憶體之轉換機制及可靠度探討王振鵬; Wang, Jen-Peng; 莊紹勳; Chung, Steve S.; 電子研究所
2013含氧化鉿薄膜之電阻式記憶體特性研究王士豪; Wang, Shih-Hao; 謝宗雍; Hsieh, Tsung-Eong; 材料科學與工程學系所
2010電感耦合電漿氮化製程與氟化製程對鉿系高介電常數材料薄膜之效果陳柏寧; Chen, Bwo-Ning; 張國明; Chang, Kow-Ming; 電子研究所
顯示 1 到 12 筆資料，總共 12 筆