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公開日期標題作者
1-三月-2011Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good RetentionTsai, C. Y.; Lee, T. H.; Chin, Albert; 電機工程學系; Department of Electrical and Computer Engineering
1-三月-2011Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO2 Charge Trapping LayerChen, Lun-Jyun; Wu, Yung-Chun; Chiang, Ji-Hong; Hung, Min-Feng; Chang, Chin-Wei; Su, Po-Wen; 交大名義發表; National Chiao Tung University
1-九月-2019Depolarization Field in Ferroelectric Nonvolatile Memory Considering Minor Loop OperationYou, Wei-Xiang; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2011Effects of EUV Irradiation on Poly-Si SONOS NVM DevicesTsui, Bing-Yue; Yen, Chih-Chan; Li, Po-Hsueh; Lai, Jui-Yao; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2009Formation and Nonvolatile Memory Application of Ge Nanocrystals by Using Internal Competition Reaction of Si1.33Ge0.67O2 and Si2.67Ge1.33N2 LayersChen, Wei-Ren; Chang, Ting-Chang; Hsieh, Yen-Ting; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si3N4-Thickness Trapping LayerTsai, C. Y.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2013High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment TechniqueLiu, Sheng-Hsien; Yang, Wen-Luh; Lin, Yu-Hsien; Wu, Chi-Chang; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-四月-2012High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping LayerChen, Hung-Bin; Wu, Yung-Chun; Chen, Lun-Chun; Chiang, Ji-Hong; Yang, Chao-Kan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2008Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layerLin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2006Investigation of programming charge distribution in nonoverlapped implantation nMOSFETsJeng, Erik S.; Kuo, Pai-Chun; Hsieh, Chien-Sheng; Fan, Chen-Chia; Lin, Kun-Ming; Hsu, Hui-Chun; Chou, Wu-Ching; 電子物理學系; Department of Electrophysics
1-一月-2019Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) MethodChen, Lun-Chun; Chen, Hung-Bin; Chang, Yu-Shuo; Lin, Shih-Han; Han, Ming-Hung; Wu, Jia-Jiun; Yeh, Mu-Shin; Lin, Yu-Ru; Wu, Yung-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2010A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention CharacteristicsSu, Nai-Chao; Wang, Shui Jinn; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon NanocrystalsChiang, Tsung-Yu; Ma, William Cheng-Yu; Wu, Yi-Hong; Wang, Kuan-Ti; Chao, Tien-Sheng; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon NanocrystalsChiang, Tsung-Yu; Ma, William Cheng-Yu; Wu, Yi-Hong; Wang, Kuan-Ti; Chao, Tien-Sheng; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007Performance improvement and scalability of nonoverlapped implantation nMOSFETs with charge-trapping spacers as nonvolatile memoriesJeng, Erik S.; Chiu, Chia-Sung; Hon, Chih-Hsueh; Kuo, Pai-Chun; Fan, Chen-Chia; Hsieh, Chien-Sheng; Hsu, Hui-Chun; Chen, Yuan-Feng; 電信工程研究所; Institute of Communications Engineering
1-十二月-2010Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping LayerChen, Lun-Chun; Wu, Yung-Chun; Lin, Tien-Chun; Huang, Jyun-Yang; Hung, Min-Feng; Chen, Jiang-Hung; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2007A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retentionYang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.; 奈米科技中心; Center for Nanoscience and Technology
1-四月-2011Redox Reaction Switching Mechanism in RRAM Device With Pt/CoSiOX/TiN StructureSyu, Yong-En; Chang, Ting-Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan-Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2006Resistive switching mechanisms of V-doped SrZrO3 memory filmsLin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2020Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase DistributionLiu, You-Sheng; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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