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公開日期標題作者
1-十二月-2003Bi-mode breakdown test methodology of ultrathin oxideSu, HD; Chiou, BS; Ko, CY; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2003Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxideSu, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Cha, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2003A floating well method for exact capacitance-voltage measurement of nano technologySu, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2002Novel chip standby current prediction model and ultrathin gate oxide scaling limitSu, HD; Chiou, BS; Lu, PC; Chang, MH; Lee, KH; Chao, CP; See, YC; Sung, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2006Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxideWu, WH; Tsui, BY; Huang, YP; Hsieh, FC; Chen, MC; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999利用氟和/或氮離子佈植於矽化鈷堆疊閘極氧化層之特性研究郭立民; Lim-Min Guo; 雷添福; 楊賜麟; Dr. Tan-Fu Lei; Dr. Su-Lin Yang; 電子物理系所
1999超薄氧化層厚度的萃取張名君; Ming-Chun Chan; 陳明哲; Dr. Ming-Jer Chen; 電子研究所
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