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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
1-七月-1995BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORLIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-六月-1993CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONCHEN, HD; CHANG, CY; LIN, KC; CHAN, SH; FENG, MS; CHEN, PA; WU, CC; JUANG, FY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-六月-1994CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
20-六月-1993DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, CC; LIN, KC; CHAN, SH; FENG, MS; CHANG, CY; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-九月-1994INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XPCHAN, SH; CHANG, CY; SZE, SM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-十二月-1994INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCESCHAN, SH; CHANG, CY; SZE, SM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
5-九月-1994MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWU, CC; CHANG, CY; CHEN, PA; CHEN, HD; LIN, KC; CHAN, SH; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
24-十月-1994SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCECHAN, SH; SZE, SM; CHANG, CY; LEE, WI; 電子物理學系; 電控工程研究所; Department of Electrophysics; Institute of Electrical and Control Engineering
1-十二月-1994SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCESCHAN, SH; SZE, SM; CHANG, CY; LEE, WI; 電子物理學系; Department of Electrophysics
1994THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAASWU, JW; CHAN, SH; LIN, KC; CHANG, CY; CHANG, EY; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1993SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITIONWU, CC; FENG, MS; LIN, KC; CHAN, SH; CHANG, CY; 交大名義發表; National Chiao Tung University
1-九月-1995SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-1995SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONWANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
顯示 1 到 13 筆資料，總共 13 筆