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公開日期標題作者
1-十二月-1992ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATEJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-十月-1995ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORSTAI, YH; TSAI, JW; CHENG, HC; SU, FC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
23-十月-1995ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORSTAI, YH; TSAI, JW; CHENG, HC; SU, FC; 奈米中心; Nano Facility Center
1-八月-1993CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURESCHENG, HC; TAI, YH; FENG, MS; WANG, JJ; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1994CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONSWANG, CK; YING, TL; WEI, CS; LIU, LM; CHENG, HC; LIN, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1995CHARACTERIZATION OF H-2/N-2 PLASMA PASSIVATION PROCESS FOR POLY-SI THIN-FILM TRANSISTORS (TFTS)TSAI, MJ; WANG, FS; CHENG, KL; WANG, SY; FENG, MS; CHENG, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-1992CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATESJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-九月-1992CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111)JUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-1987CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE GROWTH-KINETICS OF HEXAGONAL MOSI2 ON (001)SICHENG, JY; CHENG, HC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1990THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDESCHENG, HC; CHAO, CY; SU, WD; CHANG, SW; LEE, MK; WU, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-一月-1995EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-CLIU, CC; LEE, CY; CHENG, KL; CHENG, HC; YEW, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1995EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMSLIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC; 奈米中心; Nano Facility Center
1-十一月-1995THE EFFECTS OF NH3 PLASMA PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORSWANG, FS; TSAI, MJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1991EFFECTS OF P+-IMPLANTED POLY-SI ELECTRODES ON THE GATE DIELECTRIC CHARACTERISTICS OF THIN OXIDESCHENG, HC; CHEN, WS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDESKANG, TK; UENG, SY; DAI, BT; CHEN, LP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1995EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATESCHENG, HC; UENG, SY; WANG, PW; KANG, TK; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1992EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMSJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1992EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .2. THIN COBALT FILMSJUANG, MH; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1994EFFECTS OF VACANCIES ON THE ELECTRICAL CHARACTERISTICS OF METAL GAAS SCHOTTKY CONTACTS A QUANTITATIVE MODELSZE, JJ; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1995ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURETSAI, MJ; WANG, PW; SU, HP; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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