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公開日期標題作者
15-五月-2001Activation of p-type GaN in a pure oxygen ambientWen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-十一月-1998Direct focusing modifications of elliptical Gaussian beam by non-circular aperturesChan, SH; Shiue, SG; Lu, MH; 光電工程學系; Department of Photonics
1-十一月-1998Direct focusing modifications of elliptical Gaussian beam by non-circular aperturesChan, SH; Shiue, SG; Lu, MH; 光電工程研究所; Institute of EO Enginerring
1-四月-2000Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin filmsLeu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1995Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
15-七月-1999Electrical properties of multiple high-dose Si implantation in p-GaNLai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-十一月-1999Electrical properties of the Si implantation in Mg doped p-GaNLai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; 光電工程學系; Department of Photonics
1-十月-1998Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor depositionLai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-五月-1996Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-五月-1996Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-四月-1996High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5PChai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1997Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresTsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY; 交大名義發表; National Chiao Tung University
18-十一月-1996Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor depositionChen, WC; Chang, CS; Chan, SH; 光電工程學系; Department of Photonics
顯示 1 到 13 筆資料，總共 13 筆