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公開日期標題作者
23-三月-2018Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusionKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-五月-2017Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layerKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-一月-2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmsIsmail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2017High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM DeviceKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2020High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending ConditionKumar, Dayanand; Chand, Umesh; Siang, Lew Wen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-五月-2015Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structureChand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2014Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin LayerChand, Umesh; Huang, Chun-Yang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier LayerChand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-十一月-2015Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architectureChand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2019One Bipolar Selector-One Resistor for Flexible Crossbar Memory ApplicationsKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-九月-2014Overview of emerging nonvolatile memory technologiesMeena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applicationsMeena, Jagan Singh; Chu, Min-Ching; Singh, Ranjodh; Wu, Chung-Shu; Chand, Umesh; You, Hsin-Chiang; Liu, Po-Tsun; Shieh, Han-Ping D.; Ko, Fu-Hsiang; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-六月-2014Resistive switching characteristics of Pt/CeOx/TiN memory deviceIsmail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2018Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory deviceKumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2015Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applicationsIsmail, Muhammad; Rana, Anwar Manzoor; Talib, Ijaz; Tsai, Tsung-Ling; Chand, Umesh; Ahmed, Ejaz; Nadeem, Muhammad Younus; Aziz, Abdul; Shah, Nazar Abbas; Hussain, Muhammad; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-四月-2015Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memoryChand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2017Switching characteristics in TiO2/ZnO double layer resistive switching memory deviceJain, Praveen K.; Salim, Mohammad; Chand, Umesh; Periasamy, C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2020ZrN-Based Flexible Resistive Switching MemoryKumar, Dayanand; Chand, Umesh; Siang, Lew Wen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 18 筆資料，總共 18 筆