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公開日期標題作者
25-十月-200760GHz broadband 0/1-level RF-via interconnect for RF-MEMS packagingWu, Wc.; Hsu, L. H.; Chang, E. Y.; Starski, J. P.; Zirath, H.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2011Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS CapacitorsKanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
16-八月-2007Coaxial transitions for CPW-to-CPW flip chip interconnectsWu, W. C.; Chang, E. Y.; Huang, C. H.; Hsu, L. H.; Starski, J. P.; Zirath, H.; 材料科學與工程學系; Department of Materials Science and Engineering
5-十二月-2014Control of metamorphic buffer structure and device performance of InxGa1-xAs epitaxial layers fabricated by metal organic chemical vapor depositionNguyen, H. Q.; Yu, H. W.; Luc, Q. H.; Tang, Y. Z.; Phan, V. T. H.; Hsu, C. H.; Chang, E. Y.; Tseng, Y. C.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2007DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNxShiu, J. Y.; Desmaris, V.; Rorsman, N.; Kumakura, K.; Makimoto, T.; Zirath, H.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-2007Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMTChu, L. H.; Chang, E. Y.; Chang, L.; Wu, Y. H.; Chen, S. H.; Hsu, H. T.; Lee, T. L.; Lien, Y. C.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
24-十月-2011Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxyYu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
6-十二月-2010Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
6-十二月-2010Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodesYu, H. W.; Chang, E. Y.; Nguyen, H. Q.; Chang, J. T.; Chung, C. C.; Kuo, C. I.; Wong, Y. Y.; Wang, W. C.; 材料科學與工程學系; Department of Materials Science and Engineering
2009Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS StructureFunamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H.; 交大名義發表; National Chiao Tung University
1-六月-2011Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-六月-2011Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2013Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrateCheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E. Y.; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
2016Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate InsulatorLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
2016Evaluation of GaN HEMT with Field Plate for Reliability ImprovementLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Chin, P. C.; Hsu, H. T.; Hsieh, T. E.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-一月-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2011Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatmentsTrinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2018First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate StackLuc, Q. H.; Fan-Chiang, C. C.; Huynh, S. H.; Huang, P.; Do, H. B.; Ha, M. T. H.; Jin, Y. D.; Nguyen, T. A.; Zhang, K. Y.; Wang, H. C.; Lin, Y. K.; Lin, Y. C.; Hu, C.; Iwai, H.; Chang, E. Y.; 交大名義發表; National Chiao Tung University
1-一月-2016GaN MIS-HEMT with Low Dynamic ON-resistance Using SiON PassivationLiu, S. C.; Huang, C. K.; Chang, E. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
8-一月-2007Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applicationsLin, Y. C.; Yamaguchi, H.; Chang, E. Y.; Hsieh, Y. C.; Ueki, M.; Hirayama, Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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