1. 目前位置：

瀏覽 的方式： 作者 Chang, Edward Y.

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
2014A Comprehensive Transport Model for High Performance HEMTs Considering the Parasitic Resistance and Capacitance EffectsHung, C. M.; Li, K. C.; Hsieh, E. R.; Wang, C. T.; Kou, C. I.; Chang, Edward Y.; Chung, Steve S.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2019Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applicationsYao, Jing Neng; Lin, Yueh Chin; Lin, Min Song; Huang, Ting Jui; Hsu, Heng Tung; Sze, Simon M.; Chang, Edward Y.; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-二月-2020Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band ApplicationsLin, Y. C.; Chen, S. H.; Lee, P. H.; Lai, K. H.; Huang, T. J.; Chang, Edward Y.; Hsu, Heng-Tung; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
3-二月-2005Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layerChang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen
14-六月-2007Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layerChang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen
1-十二月-2010Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technologyKuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Y.; Chen, Yu-Lin; Lim, Wee-Chin; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2010Improvement on the noise performance of InAs-based HEMTs with gate sinking technologyHsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao; 材料科學與工程學系; Department of Materials Science and Engineering
1-四月-2007Mechanism of microstructure evolution for the Cu/Ta/GaAs structure after thermal annealingChang, Chun-Wei; Lee, Huang-Ming; Chen, Chang-You; Chang, Li; Chang, Edward Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2014Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution applicationChiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2019Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise ApplicationWang, C.; Lin, Y. C.; Kuo, C. N.; Lee, M. W.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Chang, Edward Y.; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTsLin, Y. C.; Lee, M. W.; Tsai, M. Y.; Wang, C.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Maa, J. S.; Chang, Edward Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2008Use of Spin-On-Hard Mask Materials for nano scale patterning technologyWu, Wen-Hao; Chang, Edward Y.; Cheon, Hwan-Sung; Kim, Sang Kyun; Cho, Hyeon Mo; Yoon, Kyong-Ho; Kim, Jong Seob; Chang, Tuwon; Shin, Seongho; 材料科學與工程學系; Department of Materials Science and Engineering
2008旋轉塗佈硬質罩幕材料與製程表現之研究吳文豪; Wu, Wen-Hao; 張翼; Chang, Edward Y.; 工學院半導體材料與製程設備學程
顯示 1 到 13 筆資料，總共 13 筆