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公開日期標題作者
1-一月-2013Analysis of bump resistance and current distribution of ultra-fine-pitch microbumpsChang, Y. W.; Peng, H. Y.; Yang, R. W.; Chen, Chih; Chang, T. C.; Zhan, C. J.; Juang, J. Y.; Huang, Annie T.; 材料科學與工程學系; Department of Materials Science and Engineering
2007Analysis of parasitic resistance and channel sheet conductance of a-Si : H TFT under mechanical bendingWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2006Effect of supercritical fluids on field emission from carbon nanotubesLiu, P. T.; Tsai, C. T.; Kin, K. T.; Chang, P. L.; Chen, C. M.; Cheng, H. F.; Chang, T. C.; 光電工程學系; Department of Photonics
15-十二月-2014Fast phase transformation due to electromigration of 18 mu m microbumps in three-dimensional integrated-circuit integrationChang, Y. W.; Chen, Chih; Chang, T. C.; Zhan, C. J.; Juang, J. Y.; Huang, Annie T.; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2014High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architectureChang, Y. F.; Ji, L.; Chen, Y. C.; Zhou, F.; Tsai, T. M.; Chang, K. C.; Chen, M. C.; Chang, T. C.; Fowler, B.; Yu, E. T.; Lee, J. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory ComputingWang, Z. R.; Li, Y.; Su, Y. T.; Zhou, Y. X.; Yin, K. S.; Cheng, L.; Chang, T. C.; Xue, K. H.; Sze, S. M.; Miao, X. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007The instability of a-Si : H TFT under mechanical strain with high frequency ac bias stressWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Lin, Y. P.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-十一月-2010Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-十一月-2010Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsWang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-一月-2006The Mechanisms of on/off currents for the Dual-Gate a-Si : H thin film transistors with various length sizes of indium-tin-oxide top gateLiang, Chung-Yu; Chang, T. C.; Po-Tsun, Liu; Gan, Feng-Yuan; Yeh, F. S.; 顯示科技研究所; Institute of Display
26-三月-2007Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
26-三月-2007Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxideYang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
10-二月-2007Metal nanocrystals as charge storage nodes for nonvolatile memory devicesYeh, P. H.; Chen, L. J.; Liu, P. T.; Wang, D. Y.; Chang, T. C.; 光電工程學系; Department of Photonics
9-七月-2007n(+)-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
28-五月-2007Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
3-十二月-2007Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory applicationYang, F. M.; Chang, T. C.; Liu, Po-Tsun; Yeh, Y. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
7-五月-2007Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistorWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Tsao, S. W.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2007Schottky barrier height for the photo leakage current transformation of a-Si : H TFTsWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Li, Y. Y.; Xiao, R. W.; Lin, L. F.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
3-十二月-2007Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage currentWang, M. C.; Chang, T. C.; Liu, P. T.; Li, Y. Y.; Huang, F. S.; Mei, Y. J.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
6-八月-2007Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu/CuMg as source/drain metalWang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Huang, F. S.; Chen, J. R.; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
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