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顯示 1 到 8 筆資料，總共 8 筆
公開日期標題作者
1-四月-2010Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorodsLing, Shih-Chun; Chao, Chu-Li; Chen, Jun-Rong; Liu, Po-Chun; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Cheng, Shun-Jen; Tsay, Jenq-Dar; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2009High-Quality Free-standing GaN Thick-films Prepared by Hydride Vapor Phase Epitaxy using Stress Reducing TechniquesHuang, Hsin-Hsiung; Lee, Wei-I; Chen, Kuei-Ming; Chu, Ting-Li; Wu, Pei-Lun; Yu, Hung-Wei; Liu, Po-Chun; Chao, Chu-Li; Chi, Tung-Wei; Tsay, Jenq-Dar; Tu, Li-Wei; 電子物理學系; Department of Electrophysics
2010Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral OvergrowthChiu, Ching-Hsueh; Lin, Da-Wei; Li, Zhen-Yu; Chiu, Chin-Hua; Chao, Chu-Li; Tu, Chia-Cheng; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; 光電工程學系; Department of Photonics
1-十二月-2010Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etchingChen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
22-六月-2009Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation densityLing, Shih-Chun; Chao, Chu-Li; Chen, Jun-Rong; Liu, Po-Chun; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Cheng, Shun-Jen; Tsay, Jenq-Dar; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
15-六月-2011Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN SubstratesChao, Chu-Li; Xuan, Rong; Yen, Hsi-Hsuan; Chiu, Ching-Hsueh; Fang, Yen-Hsiang; Li, Zhen-Yu; Chen, Bo-Chun; Lin, Chien-Chung; Chiu, Ching-Hua; Guo, Yih-Der; Kuo, Hao-Chung; Chen, Jenn-Fang; Cheng, Shun-Jen; 光電系統研究所; 電子物理學系; 光電工程學系; Institute of Photonic System; Department of Electrophysics; Department of Photonics
1-五月-2009Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structureHuang, Hsin-Hsiung; Chao, Chu-Li; Chi, Tung-Wei; Chang, Yu-Lin; Liu, Po-Chun; Tu, Li-Wei; Tsay, Jenq-Dar; Kuo, Hao-Chung; Cheng, Shun-Jen; Lee, Wei-I; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2010Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase EpitaxyChen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Gao, Zhong-Shan; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
顯示 1 到 8 筆資料，總共 8 筆