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公開日期標題作者
1-十二月-2012Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC ApplicationsTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
14-十月-2013Characteristics of hafnium oxide resistance random access memory with different setting compliance currentSu, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access MemoryZhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
三月-2016Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devicesChen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-八月-2013Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid processChang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
21-十一月-2013High performance of graphene oxide-doped silicon oxide-based resistance random access memoryZhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devicesChen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2015Hopping conduction properties of the Sn:SiO (X) thin-film resistance random access memory devices induced by rapid temperature annealing procedureChen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liao, Kuo-Hsiao; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid TreatmentChang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-四月-2016Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide ElectrodeChen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatmentChang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-二月-2016Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 TreatmentChen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2015Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 FluidChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2013Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory DevicesChang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
21-十二月-2013Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memoryZhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十一月-2016Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十二月-2016Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access MemoryChen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
四月-2016Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access MemoryTsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M.; 光電工程學系; Department of Photonics
11-十二月-2013Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layerChang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2014Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access MemoryChu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 20 筆資料，總共 20 筆