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公開日期標題作者
1-二月-1996Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etchingKang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1996Au/Ge/Pd ohmic contacts to n-GaAs with the Mo/Ti diffusion barrierChai, CY; Huang, JA; Lai, YL; Wu, JW; Chang, CY; Chan, YJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Characteristics of (Pb, Sr)TiO3 films post treated by low temperature technologiesWang, JL; Jan, CK; Shye, DC; Kuo, MW; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Characteristics of low-temperature-prepared (Ba, Sr)TiO3 films post treated by novel excimer laser annealingShye, DC; Chiou, BS; Hwang, CC; Chen, JS; Su, IW; Chou, CC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1996Characterization and fabrication of chimney-shaped metal field emittersCheng, HC; Wang, CC; Ku, TK; Hsieh, IJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1996Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistorsLiang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
18-十二月-1997Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layersLin, CF; Cheng, HC; Feng, MS; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2003Characterizing trench-gate power metal-oxide-semiconductor field effect transistor with multi-layer dielectrics at the trench bottomLin, MJ; Liaw, CW; Chang, FL; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1997Charging damages to gate oxides in a helicon O-2 plasmaLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1997Charging damages to gate oxides in a helicon O-2 plasmaLin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1998Chimney-shaped and plateau-shaped gate electrode field emission arraysTarntair, FG; Wang, CC; Hong, WK; Huang, HK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Chimney-shaped and plateau-shaped gate electrode field emission arraysTarntair, FG; Wang, CC; Hong, WK; Huang, HK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Chimney-shaped and plateau-shaped gate electrode field emission arraysTarntair, FG; Wang, CC; Hong, WK; Huang, HK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperatureLee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-2003Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-offChu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
1-十月-2002Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor depositionChen, LC; Wen, CY; Liang, CH; Hong, WK; Chen, KJ; Cheng, HC; Shen, CS; Wu, CT; Chen, KH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Current-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealingShye, DC; Chen, JS; Kuo, MW; Chou, BCS; Jan, CK; Wu, MF; Chiou, BS; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2002Degradation of passivated and non-passivated N-channel low-temperature polycrystalline silicon TFTs prepared by excimer laser processingTeng, TH; Huang, CY; Chang, TK; Lin, CW; Cheng, LJ; Lu, YL; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Dependence of polarization on temperature coefficient resistance of (Ba, Sr)TiO3 thin films post-treated by RTAShye, DC; Chiou, BS; Kuo, MW; Chen, JS; Chou, BCS; Jan, CK; Wu, MF; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-一月-1997Deposition of polycrystalline beta-SiC films on Si substrates at room temperatureCheng, KL; Cheng, HC; Lee, WH; Lee, CP; Liu, CC; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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