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顯示 1 到 8 筆資料，總共 8 筆
公開日期標題作者
1-十月-2008Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescenceHsu, Chiung-Chih; Hsu, Ray-Quen; Wu, Yue-Han; Chi, Tung-Wei; Chiang, Chen-Hao; Chen, Jenn-Fang; Chang, Mao-Nan; 機械工程學系; 材料科學與工程學系; 電子物理學系; Department of Mechanical Engineering; Department of Materials Science and Engineering; Department of Electrophysics
2009High-Quality Free-standing GaN Thick-films Prepared by Hydride Vapor Phase Epitaxy using Stress Reducing TechniquesHuang, Hsin-Hsiung; Lee, Wei-I; Chen, Kuei-Ming; Chu, Ting-Li; Wu, Pei-Lun; Yu, Hung-Wei; Liu, Po-Chun; Chao, Chu-Li; Chi, Tung-Wei; Tsay, Jenq-Dar; Tu, Li-Wei; 電子物理學系; Department of Electrophysics
1-四月-2008Investigations on highly stable thermal characteristics of a dilute In(0.2)Ga(0.8)AsSb/GaAs doped-channel field-effect transistorSu, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-十二月-2010Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etchingChen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
1-二月-2007A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMTSu, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-五月-2009Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structureHuang, Hsin-Hsiung; Chao, Chu-Li; Chi, Tung-Wei; Chang, Yu-Lin; Liu, Po-Chun; Tu, Li-Wei; Tsay, Jenq-Dar; Kuo, Hao-Chung; Cheng, Shun-Jen; Lee, Wei-I; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
2010Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase EpitaxyChen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Gao, Zhong-Shan; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I; 電子物理學系; Department of Electrophysics
2008Triangular extended microtunnels in GaN prepared by selective crystallographic wet chemical etchingHuang, Hsin-Hsiung; Wu, Pei-Lun; Zeng, Hung-Yu; Liu, Po-Chun; Chi, Tung-Wei; Tsay, Jenq-Dar; Leea, Wei-I; 電子物理學系; Department of Electrophysics
顯示 1 到 8 筆資料，總共 8 筆