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公開日期標題作者
2012Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer LayersBinh-Tinh Tran; Chang, Edward Yi; Lin, Kung-Liang; Luong, Tien-Tung; Yu, Hung-Wei; Huang, Man-Chi; Chung, Chen-Chen; Hai-Dang Trinh; Hong-Quan Nguyen; Chi-Lang Nguyen; Quang-Ho Luc; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2014Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVDChi-Lang Nguyen; Nguyen Hong Quan; Binh-Tinh Tran; Su, Yung-Hsuan; Tang, Shih-Hsuan; Luo, Guang-Li; Chang, Edward-Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-十一月-2014Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si SubstratesBinh Tinh Tran; Lin, Kung-Liang; Sahoo, Kartika Chandra; Chung, Chen-Chen; Chi-Lang Nguyen; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2012Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPsHai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 4 筆資料，總共 4 筆