1. 目前位置：

瀏覽 的方式： 作者 Feng, MS

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 92 筆  下一頁 >
公開日期標題作者
2001AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etchHuang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2001AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescenceFang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-七月-1996Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance methodChen, JF; Chen, NC; Huang, WY; Lee, WI; Feng, MS; 材料科學與工程學系; 電子物理學系; Department of Materials Science and Engineering; Department of Electrophysics
1-五月-2005Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnectionChiu, SY; Wang, YL; Chang, SC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
15-十一月-2003The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layerChiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering
8-一月-1996A bilayer Ti/Ag ohmic contact for highly doped n-type GaN filmsGuo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-1996Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistorsLiang, CW; Luo, TC; Feng, MS; Cheng, HC; Su, D; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
16-十月-2000Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor depositionChen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
18-十二月-1997Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layersLin, CF; Cheng, HC; Feng, MS; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-1997Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin filmsTseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
31-十月-1997Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivityWang, YL; Liu, C; Chang, ST; Tsai, MS; Feng, MS; Tseng, WT; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
24-六月-1996The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerLin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous SiChao, CW; Wu, YCS; Hu, GR; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
22-十二月-2004Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor depositionCheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Wu, Y; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-五月-2004Effect of deposition temperature, on thermal stability in high-density plasma chemical vapor deposition fluorine-doped silicon dioxideCheng, YL; Wang, YL; Chen, HW; Lan, JL; Liu, CP; Wu, SA; Wu, YL; Lo, KY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2002The effect of plating current densities on self-annealing Behaviors of electroplated copper filmsChang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; 材料科學與工程學系; Department of Materials Science and Engineering
2006Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishingFang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-1999Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memoryLin, CF; Tung, IC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-1999Effects of O-2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxideChen, YC; Yang, MZ; Tung, IC; Chen, MP; Feng, MS; Cheng, HC; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 20 筆資料，總共 92 筆  下一頁 >