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Issue DateTitleAuthor(s)
20-Apr-2005A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvementsMeng, CC; Hsu, SK; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
4-Aug-20055.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformersMeng, CC; Chen, CH; Chang, YW; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-Jun-2005A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technologyWu, TH; Meng, CC; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
2004An accurate RF CMOS gate resistance model compatible with HSPICELin, HW; Chung, SS; Wong, SC; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Sep-2002Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistorsChen, KM; Huang, GW; Chiu, DY; Huang, HJ; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2001An automatic macro program for radio frequency MOSFET characteristics analysisSu, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdownHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2000CMOS RFIC: Application to wireless transceiver designWen, KA; Wuen, WS; Huang, GW; Chen, LP; Chen, KY; Liu, SF; Chen, ZS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2004Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applicationsChang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
2004Computation of noise parameters using genetic algorithmsChen, HY; Chen, KM; Huang, GW; Cho, MH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Mar-2004DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technologyMeng, CC; Wu, TH; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-Jun-2005Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stressChen, KM; Hu, HH; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1998Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygenChen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor depositionChang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Jul-2000Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETsSu, CY; Chen, LP; Chang, SJ; Huang, GW; Ho, YP; Tseng, BM; Lin, DC; Lee, HY; Kuan, JF; Deng, YM; Chen, CL; Leu, LY; Wen, KA; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2006The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devicesMeng, CC; Su, JY; Tsou, BC; Huang, GW; 電信工程研究所; Institute of Communications Engineering
1-Feb-2004Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETsLee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2005Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunnelingWu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 65  next >