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公開日期標題作者
1-十二月-2000Effect of rapid thermal annealed TiN barrier layer on BST capacitors prepared by RF magnetron cosputter system at low substrate temperaturesHwang, CC; Jaing, CC; Lai, MJ; Chen, JS; Huang, S; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2001Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperatureHwang, CC; Juang, MH; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1998Effects of CoSi2 on p(+) polysilicon gates fabricated by BF2+ implantation into CoSi amorphous Si bilayersCheng, HC; Lai, WK; Liu, HW; Juang, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2003Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperaturesShye, DC; Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Chiou, BS; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1999Effects of rapid thermal annealing on cobalt silicided p(+) poly-Si gates fabricated by BF2+ implantation into bilayered CoSi/a-Si filmsLai, WK; Liu, HW; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2004Fabrication of trench-gate power MOSFETs by using a dual doped body regionJuang, MH; Chen, WT; Ou-Yang, CI; Jang, SL; Lin, MJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1999Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidationJuang, MH; Hu, MC; Yang, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2000Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substratesHwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1998A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent annealLai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1999Suppression of boron penetration for p(+) stacked poly-Si gates by using inductively coupled N-2 plasma treatmentCheng, HC; Lai, WK; Hwang, CC; Juang, MH; Chu, SC; Liu, TF; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 10 筆資料，總共 10 筆