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公開日期標題作者
15-九月-2019Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratioAnandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor depositionKakkerla, Ramesh Kumar; Anandan, Deepak; Singh, Sankalp Kumar; Yu, Hung Wei; Lee, Ching-Ting; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-二月-2018Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) SubstrateYu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Minh Thien Huu Ha; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 電子工程學系及電子研究所; 光電工程學系; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
16-十月-2017Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power applicationHsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十一月-2018Growth and Crystal Structure Investigation of InAs/GaSb Heterostructure Nanowires on Si SubstrateKakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Sheng-Po; Pande, Krishna P.; Chang, Edward Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-一月-2017Growth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrateKakkerla, Ramesh Kumar; Hsiao, Chih-Jen; Anandan, Deepak; Singh, Sankalp Kumar; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
15-一月-2019Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVDAnandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十月-2019Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performanceSingh, Sankalp Kumar; Kakkerla, Ramesh Kumar; Joseph, H. Bijo; Gupta, Ankur; Anandan, Deepak; Nagarajan, Venkatesan; Yu, Hung Wei; Thiruvadigal, D. John; Chang, Edward Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
15-五月-2018Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVDKakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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