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公開日期標題作者
1-二月-201030-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsChang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2009A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise ApplicationsWang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng; 材料科學與工程學系; Department of Materials Science and Engineering
2008An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer LayersChang, Edward Yi; Lin, Yueh-Chin; Hsiao, Yu-Lin; Hsieh, Y. C.; Chang, Chia-Yuan; Kuo, Chien-I; Luo, Guang-Li; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2012Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHzFatah, Faiz; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Hsu, Ching-Yi; Miyamoto, Yasuyuki; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2011The Circle-grid Electrode on Concentrated GaAs Solar Cells EfficiencyChung, Chen-Chen; Yu, Hung-Wei; Hsu, Li-Han; Kuo, Chien-I; Nguyen-Hong Quan; Chiu, Yu-Sheng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
2010DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing TechnologyKuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2012Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry EtchingKuo, Chien-I; Hsu, Heng-Tung; Hsu, Ching-Yi; Yu, Chia-Hui; Ho, Han-Chieh; Chang, Edward Yi; Chyi, Jen-Inn; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2012Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si SubstratesHsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop; 材料科學與工程學系; 半導體材料與製程設備組; 照明與能源光電研究所; Department of Materials Science and Engineering; Degree Program of Semiconductor Material and Process Equipment; Institute of Lighting and Energy Photonics
2008Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applicationsWu, Chien-Ying; Hsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Yi; Chen, Yu-lin; 材料科學與工程學系; Department of Materials Science and Engineering
2007Evaluation of RF and logic performance for 80 nm InAs/InGaAs composite channel HEMTs using gate sinking technologyKuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Hsu, Heng-Shou; 材料科學與工程學系; Department of Materials Science and Engineering
2010Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost Organic Substrate for W-Band ApplicationsLim, Wee Chin; Wang, Chin-Te; Kuo, Chien-I; Hsu, Li-Han; Tsai, Szu-Ping; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2011Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic SubstrateWang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Hsu, Li-Han; Lim, Wee-Chin; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2013Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrationsTang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2007High-performance In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor for Ka-band applicationsChang, Chia-Yuan; Chang, Edward Yi; Lien, Yi-Chung; Miyamoto, Yasuyuki; Kuo, Chien-I; Chen, Szu-Hung; Chu, Li-Hsin; 材料科學與工程學系; Department of Materials Science and Engineering
1-十二月-2010Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technologyKuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Y.; Chen, Yu-Lin; Lim, Wee-Chin; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2010Improvement on the noise performance of InAs-based HEMTs with gate sinking technologyHsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao; 材料科學與工程學系; Department of Materials Science and Engineering
2008InAs channel-based quantum well transistors for high-speed and low-voltage digital applicationsKuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2008InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier applicationKuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2013InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave ApplicationsChang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki; 材料科學與工程學系; Department of Materials Science and Engineering
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