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公開日期標題作者
1-七月-1995AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORSCHERN, HN; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-九月-1993ANOMALOUS DOPING BEHAVIOR OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; CHAO, CY; 機械工程學系; 電控工程研究所; Department of Mechanical Engineering; Institute of Electrical and Control Engineering
1-二月-1995CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCECHEN, TP; LEI, TF; LIN, HC; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1995CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEMLIN, HY; LEI, TF; LIN, HC; CHANG, CY; TWU, RC; DENG, RC; LIN, JD; 電子物理學系; Department of Electrophysics
1-十月-1993CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILMWU, SL; LEE, CL; LEI, TF; CHANG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1995CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMSYANG, CK; LEI, TF; LEE, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1993CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITIONCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-八月-1992CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATIONWU, SL; LEE, CL; LEI, TF; LIANG, MS; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
1-十月-1994THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORSYANG, CK; LEI, TF; LEE, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1994CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALINGCHERN, HN; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1995CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2OCHAO, TS; LEI, TF; 電控工程研究所; Institute of Electrical and Control Engineering
1981DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTUREJEN, CW; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
7-二月-1994DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURESLIN, HC; LIN, HY; CHANG, CY; LEI, TF; WANG, PJ; DENG, RC; LIN, JD; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1995A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODEHUANG, WC; LEI, TF; LEE, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-二月-1994THE DOUBLE RESONANT ENHANCEMENT OF OPTICAL 2ND-HARMONIC SUSCEPTIBILITY IN THE COMPOSITIONALLY ASYMMETRIC COUPLED-QUANTUM-WELLLIEN, CS; HUANG, YM; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1994THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORSCHERN, HN; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1993THE EFFECTS OF H-2-O-2-PLASMA TREATMENT ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORSCHERN, HN; LEE, CL; LEI, TF; 電子工程學系及電子研究所; 奈米中心; 次微米人才培訓中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center; CTR SUBMICRON PROFESS TRAINING
5-七月-1993ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTUREWU, SL; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1995THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2OLAI, CS; LEI, TF; LEE, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1993ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESSWU, SL; LIN, TY; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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