1. 目前位置：

瀏覽 的方式： 作者 LIU, DG

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 21 筆  下一頁 >
公開日期標題作者
1-三月-1991ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHODLIU, DG; CHIN, TC; LEE, CP; HWANG, HL; 電控工程研究所; Institute of Electrical and Control Engineering
1-十月-1990BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXYLIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-二月-1991CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORSWU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
29-十月-1990DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXYLIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
25-五月-1992DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPYLIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1991ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONSWU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1992FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAASHSU, TM; TIEN, YC; LU, NH; TSAI, SP; LIU, DG; LEE, CP; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1992HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURESCHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-一月-1991IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONSWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
15-十月-1990INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXYCHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
15-九月-1992INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLSTSAI, KL; CHANG, KH; LEE, CP; HUANG, KF; CHANG, Y; FAN, JC; LIU, DG; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1992INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
28-二月-1991INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1992A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATIONLIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
23-十一月-1989PERIODIC FLUX INTERRUPTION AND SUSTAINED TWO-DIMENSIONAL GROWTH FOR MOLECULAR-BEAM EPITAXYLEE, CP; CHANG, KH; LIU, DG; WU, JS; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
15-八月-1992PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXYLIU, DG; CHANG, KH; LEE, CP; HSU, TM; TIEN, YC; 電控工程研究所; Institute of Electrical and Control Engineering
1-十一月-1991PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAASCHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1991QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1990REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
26-十一月-1990RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURESWU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
顯示 1 到 20 筆資料，總共 21 筆  下一頁 >