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公開日期標題作者
8-五月-1999Chain dynamics of concentrated polystyrene solutions studied by depolarized photon-correlation and viscosity measurementsLai, CS; Juang, JH; Lin, YH; 應用化學系; Department of Applied Chemistry
1-四月-2006Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealingLai, CS; Wu, WC; Wang, JC; Cha, TS; 物理研究所; Institute of Physics
30-五月-2005Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gateLai, CS; Wu, WC; Wang, JC; Chao, T; 物理研究所; Institute of Physics
1-四月-1998Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon filmsLei, TF; Cheng, JY; Shiau, SY; Chao, TS; Lai, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-七月-1996Dynamics of a ''Rouse'' segment as probed by depolarized photon-correlation and viscoelasticity measurementsLin, YH; Lai, CS; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
1-四月-2005Effects of post CF(4) plasma treatment on the HfO(2) thin filmLai, CS; Wu, WC; Fan, KM; Wang, JC; Lin, SJ; 物理研究所; Institute of Physics
1-四月-2001High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon filmLee, JW; Lee, CL; Lei, TF; Lai, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technologyChung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2006Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stackChung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1998Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidationLai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1998Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidationLai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Low temperature (850 degrees C) two-step N2O annealed thin gate oxidesLai, CS; Lee, CL; Lei, TF; Chao, TS; Peng, CH; Wang, HC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2005A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineeringChung, SS; Liu, YR; Wu, SJ; Lai, CS; Liu, YC; Chen, DF; Lin, HS; Shiau, WT; Tsai, CT; Chien, SC; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devicesChung, SS; Liu, YR; Yeh, CF; Wu, SR; Lai, CS; Chang, TY; Ho, JH; Liu, CY; Huang, CT; Tsai, CT; Shiau, WT; Sun, SW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1996Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOSLin, YH; Lai, CS; Lee, CL; Lei, TF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1996A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offsetLai, CS; Lee, CL; Lei, TF; Chern, HN; 電子工程學系及電子研究所; 電控工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Electrical and Control Engineering
2006Oxide grown on polycrystal silicon by rapid thermal oxidation in N2OKao, CH; Lai, CS; Lee, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1997The performance indicators for science and technology projects in TaiwanYang, C; Tarng, MY; Lai, CS; Lin, ZB; 管理科學系; Department of Management Science
1-一月-1997The performance indicators for science and technology projects in TaiwanYang, C; Tarng, MY; Lai, CS; Lin, ZB; 管理科學系; Department of Management Science
1-十一月-1997The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealingKao, CH; Lai, CS; Lee, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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