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公開日期標題作者
10-十二月-1998AuBe Ohmic contacts to p-type ZnTeLan, WH; Lin, WJ; Cheng, YC; Tai, K; Tasi, CM; Wu, PH; Cheng, KH; Chou, ST; Yang, CM; Cheng, YC; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-五月-2001Beryllium-implanted P-type GaN with high carrier concentrationYu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC; 光電工程學系; Department of Photonics
1-六月-1997Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structuresChen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1997Characteristics of nonalloyed pseudomorphic high electron mobility transistors using InAs/InxGa1-xAs (x=-> 0) AlyGa1-yAs (y=0 -> 0.3) contact structuresChen, SS; Lin, CC; Lan, WH; Tu, SL; Peng, CK; 材料科學與工程學系; Department of Materials Science and Engineering
22-九月-2003Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodesHsu, CY; Lan, WH; Wu, YS; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-2003GaN-based light-emitting diodes with Ni/AuBe transparent conductive layerChen, LC; Hsu, CY; Lan, WH; Teng, SY; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-1996High performance non-alloyed pseudomorphic high electron mobility transistorsPeng, CK; Lan, WH; Tu, SL; Yang, SJ; Chen, SS; Lin, CC; 材料科學與工程學系; Department of Materials Science and Engineering
2006The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDsHsu, CY; Lan, WH; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering
1-八月-2004Optical properties of Zn1-xCdxSe epilayers grown on (100)GaAs by molecular beam epitaxyKuo, MC; Chiu, KC; Shih, TH; Lai, YJ; Yang, CS; Chen, WK; Chuu, DS; Lee, MC; Chou, WC; Jeng, SY; Shih, YT; Lan, WH; 電子物理學系; Department of Electrophysics
1-十月-2005Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodesHsu, CY; Lan, WH; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering