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公開日期標題作者
16-九月-20131/f noise in micrometer-sized ultrathin indium tin oxide filmsYeh, Sheng-Shiuan; Hsu, Wei-Ming; Lee, Jui-Kan; Lee, Yao-Jen; Lin, Juhn-Jong; 電子物理學系; 物理研究所; Department of Electrophysics; Institute of Physics
五月-201632-nm Multigate Si-nTFET With Microwave-Annealed Abrupt JunctionHou, Fu-Ju; Sung, Po-Jung; Hsueh, Fu-Kuo; Wu, Chien-Ting; Lee, Yao-Jen; Chang, Mao-Nang; Li, Yiming; Hou, Tuo-Hung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
20093D 65nm CMOS with 320 degrees C Microwave Dopant ActivationLee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, Dawei; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien-Sheng; Wu, Ching-Yi; Yang, Fu-Liang; 電子物理學系; 電子工程學系及電子研究所; 電信工程研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-一月-20133D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating CurrentHsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2011Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave AnnealingHsueh, Fu-Kuo; Lee, Yao-Jen; Lin, Kun-Lin; Current, Michael I.; Wu, Ching-Yi; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-九月-2019Atomic layer defect-free etching for germanium using HBr neutral beamFujii, Takuya; Ohori, Daisuke; Noda, Shuichi; Tanimoto, Yosuke; Sato, Daisuke; Kurihara, Hideyuki; Mizubayashi, Wataru; Endo, Kazuhiko; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering
1-三月-2019Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beamOhori, Daisuke; Fujii, Takuya; Noda, Shuichi; Mizubayashi, Wataru; Endo, Kazuhiko; Lee, En-Tzu; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering
1-一月-2018Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C ImplantationBorland, John; Chaung, Shang-Shiun; Tseng, Tseung-Yuen; Lee, Yao-Jen; Joshi, Abhijeet; Basol, Bulent; Kuroi, Takashi; Goodman, Gary; Khapochkima, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University
1-一月-2018Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt AnnealingBorland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhij Eet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering
14-八月-2019Characteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas AnnealingChung, Sheng-Ti; Huang, Yi-Chin; Fu, Yen-Chun; Lee, Yao-Jen; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-一月-2020Characteristics of Poly-Si Junctionless FinFETs With HfZrO Using Forming Gas AnnealingChung, Sheng-Ti; Lee, Yao-Jen; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
2014Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave AnnealWu, Chien-Ting; Lee, Yao-Jen; Hsueh, Fu-Kuo; Sung, Po-Jung; Cho, Ta-Chun; Current, Michael Ira; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-一月-2019Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain EngineeringBorland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhijeet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University
1-四月-2010A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO(2)/poly-gate complementary metal oxide semiconductor technologyWeng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2010A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technologyWeng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETsTsai, Tzu-, I; Lee, Yao-Jen; Chen, King-Sheng; Wang, Jeff; Hsueh, Fu-Kuo; Lin, Horng-Chih; Huang, Tiao-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced LeakageLuo, Guang-Li; Huang, Shih-Chiang; Chung, Cheng-Ting; Heh, Dawei; Chien, Chao-Hsin; Cheng, Chao-Ching; Lee, Yao-Jen; Wu, Wen-Fa; Hsu, Chiung-Chih; Kuo, Mei-Ling; Yao, Jay-Yi; Chang, Mao-Nan; Liu, Chee-Wee; Hu, Chenming; Chang, Chun-Yen; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch TechnologyLee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan; 電子物理學系; 電機學院; 電子工程學系及電子研究所; Department of Electrophysics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2011Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave AnnealingLee, Yao-Jen; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Lin, Ho-Ming; Wu, Shich-Chuang; Wu, Ching-Yi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2020Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS InverterSung, Po-Jung; Su, Chun-Jung; Lo, Shih-Hsuan; Hsueh, Fu-Kuo; Lu, Darsen D.; Lee, Yao-Jen; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
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