1. 目前位置：

瀏覽 的方式： 作者 Li, MF

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 35 筆  下一頁 >
公開日期標題作者
20043D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOSYu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL; 交大名義發表; National Chiao Tung University
1-三月-2004Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gatesYu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETsYu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
10-五月-2004Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrateWu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-十月-2004Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gateYu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL; 電子物理學系; Department of Electrophysics
20-九月-2004Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistorsLow, T; Li, MF; Shen, C; Yeo, YC; Hou, YT; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2003Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETsYu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETsHuang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2005Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gateZhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003High density RF MIM capacitors using high-kappa AlTaOx dielectricsHuang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyChin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003High-density MIM canpacitors using AlTaOx dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2003A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectricsYu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2003High-performance microwave coplanar bandpass and bandstop filters on Si substratesChan, KT; Chin, A; Li, MF; Kwong, DL; McAlister, SP; Duh, DS; Lin, WJ; Chang, CY; 電子工程學系及電子研究所; 電信工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-十二月-2003High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectricsDing, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2003Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation processChan, KT; Chin, A; Lin, YD; Chang, CY; Zhu, CX; Li, MF; Kwong, DL; McAlister, S; Duh, DS; Lin, WJ; 電子工程學系及電子研究所; 電信工程研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Communications Engineering
1-七月-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 20 筆資料，總共 35 筆  下一頁 >