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顯示 1 到 16 筆資料，總共 16 筆
公開日期標題作者
十一月-2016AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave ApplicationsLin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
一月-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
一月-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十二月-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-五月-2017Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTsLiu, Shih-Chien; Huang, Chung-Kai; Chang, Chia-Hua; Lin, Yueh-Chin; Chen, Bo-Yuan; Tsai, Szu-Ping; Majlis, Burhanuddin Yeop; Dee, Chang-Fu; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
一月-2016Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivationLiu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivationLiu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
九月-2016Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma TreatmentChang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2014GaN MIS-HEMTs With Nitrogen Passivation for Power Device ApplicationsLiu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
21-六月-2018Halbleitervorrichtung und Verfahren zur Herstellung derselbenCHANG EDWARD YI; LIU SHIH-CHIEN; HUANG CHUNG-KAI; WU CHIA-HSUN; HAN PING-CHENG; LIN YUEH-CHIN; HSIEH TING-EN; Chang, Edward Yi; Liu, Shih-Chien; Huang, Chung-Kai; Wu, Chia-Hsun; Han, Ping-Cheng; Lin, Yueh-Chin; Hsieh, Ting-En
1-七月-2018High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device ApplicationsWu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-七月-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2014Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric EffectTsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2015Performance Improvements of AlGaN/GaN HEMTs by Strain Modification and Unintentional Carbon IncorporationTien-Tung Luong; Binh Tinh Tran; Ho, Yen-Teng; Minh-Thien-Huu Ha; Hsiao, Yu-Lin; Liu, Shih-Chien; Chiu, Yu-Sheng; Chang, Edward-Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2017Reliability improvement in GaN HEMT power device using a field plate approachWu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung; 材料科學與工程學系; 光電系統研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; International College of Semiconductor Technology
2017氮化鎵高功率元件性能增強技術劉世謙; 張翼; Liu, Shih-Chien; Chang, Yi; 材料科學與工程學系所
顯示 1 到 16 筆資料，總共 16 筆