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顯示 1 到 11 筆資料，總共 11 筆
公開日期標題作者
1-二月-201030-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsChang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2009460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer SpacingChang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2009Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile StrainChang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Lu, Chung-Yu; Huang, Jui-Chien; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2010Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion ImplantationShiu, Jin-Yu; Lu, Chung-Yu; Su, Ting-Yi; Huang, Rong-Tan; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-五月-2008Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the schottky contacts on AlGaN/GaN heterostructuresLu, Chung-Yu; Chang, Edward Yi; Huang, Jui-Chien; Chang, Chia-Ta; Lin, Mei-Hsuan; Lee, Ching-Tung; 材料科學與工程學系; Department of Materials Science and Engineering
10-三月-2011GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the SameChang, Edward Yi; Lu, Chung-Yu
2010Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave ApplicationsHuang, Jui-Chien; Hsu, Heng-Tung; Chang, Edward-Yi; Lu, Chung-Yu; Chang, Chia-Ta; Kuo, Fang-Yao; Chen, Yi-Chung; Hsu, Ting-Hung; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2007Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTsShiu, Jin-Yu; Huang, Jui-Chien; Desmaris, Vincent; Chang, Chia-Ta; Lu, Chung-Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2012RF Characteristics of AlGaN/GaN HEMTs under Different TemperaturesChiu, Yu-Sheng; Huang, Jui-Chien; Lin, Tai-Ming; Chou, Yu-Ting; Lu, Chung-Yu; Chang, Chia-Ta; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-八月-2006Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructuresDesmaris, Vincent; Shiu, Jin-Yu; Lu, Chung-Yu; Rorsman, Niklas; Zirath, Herbert; Chang, Edward-Yi; 材料科學與工程學系; Department of Materials Science and Engineering
2009高頻及高功率應用之氮化鋁鎵/氮化鎵高電子遷移率電晶體之研究呂宗育; Lu, Chung-Yu; 張翼; Chang, Edward-Yi; 材料科學與工程學系
顯示 1 到 11 筆資料，總共 11 筆