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公開日期標題作者
2008The ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technologyHsieh, E. R.; Chang, Derrick W.; Chung, S. S.; Lin, Y. H.; Tsai, C. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007The channel backscattering characteristics of sub-100nm CMOS devices with different channel/substrate orientationsTsai, Y. J.; Chung, Steve S.; Liu, P. W.; Tsai, C. H.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2014A Circuit Level Variability Prediction of Basic Logic Gates in Advanced Trigate CMOS TechnologyHsieh, E. R.; Hung, C. M.; Wang, T. Y.; Chung, Steve S.; Huang, R. M.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015The Demonstration of Low-cost and Logic Process Fully-Compatible OTP Memory on Advanced HKMG CMOS with a Newly found Dielectric Fuse BreakdownHsieh, E. R.; Huang, Z. H.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Effect of supercritical fluids on field emission from carbon nanotubesLiu, P. T.; Tsai, C. T.; Kin, K. T.; Chang, P. L.; Chen, C. M.; Cheng, H. F.; Chang, T. C.; 光電工程學系; Department of Photonics
2014The Experimental Demonstration of the BTI-Induced Breakdown Path in 28nm High-k Metal Gate Technology CMOS DevicesHsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2013Gate Current Variation: A New Theory and Practice on Investigating the Off-State Leakage of Trigate MOSFETs and the Power Dissipation of SRAMHsieh, E. R.; Lin, S. T.; Chung, Steve S.; Huang, R. M.; Tsai, C. T.; Jung, L. T.; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-2017Geometric Variation: A Novel Approach to Examine the Surface Roughness and the Line Roughness Effects in Trigate FinFETsHsieh, E. R.; Fan, Y. C.; Liu, C. H.; Chung, Steve S.; Huang, R. M.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable ReliabilityChung, Steve S.; Hsieh, E. R.; Huang, D. C.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic RegimeHsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008New Observation of an Abnormal Leakage Current in Advanced CMOS Devices with Short Channel Lengths Down to 50nm and BeyondHsieh, E. R.; Chung, Steve S.; Lin, Y. H.; Tsai, C. H.; Liu, P. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise MeasurementLin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term StressHsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyondChung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014The Observation of BTI-induced RTN Traps in Inversion and Accumulation Modes on HfO2 High-k Metal Gate 28nm CMOS DevicesWu, P. C.; Hsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Chang, K. Y.; Liu, C. H.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008The Observation of Trapping and Detrapping Effects in High-k Gate Dielectric MOSFETs by a New Gate Current Random Telegraph Noise (I(G)-RTN) ApproachChang, C. M.; Chung, Steve S.; Hsieh, Y. S.; Cheng, L. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Reliability of ALD Hf-based high K gate stacks with optimized interfacial layer and pocket implant engineeringMao, A. Y.; Lin, W. M.; Yang, Cw.; Hsieh, Y. S.; Cheng, L. W.; Lee, G. D.; Tsai, C. T.; Chung, S. S.; Ma, G. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015The RTN Measurement Technique on Leakage Path Finding in Advanced High-k Metal Gate CMOS DevicesHsieh, E. R.; Lu, P. Y.; Chung, Steve S.; Ke, J. C.; Yang, C. W.; Tsai, C. T.; Yew, T. R.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Technology roadmaps on the ballistic transport in strain engineered nanoscale CMOS devicesChung, Steve S.; Tsai, Y. J.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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