1. 目前位置：

瀏覽 的方式： 作者 Tsai, TM

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 20 筆資料，總共 26 筆  下一頁 >
公開日期標題作者
2004CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-一月-2004CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-十二月-2004Cu-penetration induced breakdown mechanism for a-SiCNChen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
17-十一月-2003Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applicationsLiu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technologyChang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2002Effective strategy for porous organosilicate to suppress oxygen ashing damageLiu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2001Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of oxygen plasma ashing on barrier dielectric SiCN filmChen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2005Electrical degradation of N-channel poly-Si TFT under AC stressChen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
1-七月-2002Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatmentChang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2001Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxaneChang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2001Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatmentChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-一月-2004Investigation of the electrical properties and reliability of amorphous SiCNChen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-五月-2005Leakage conduction behavior in electron-beam-cured nanoporous silicate filmsLiu, PT; Tsai, TM; Chang, TC; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-五月-2004Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect applicationChang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003Moisture-induced material instability of porous organosilicate glassChang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 20 筆資料，總共 26 筆  下一頁 >