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公開日期標題作者
28-九月-2013Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistorsTsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-1970Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistorsHo, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-十二月-2012Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistorsHo, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
四月-2016Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate DielectricsChen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate StacksHo, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Chen, Daniel; Sze, Simon M.; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
28-六月-2010Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stressChen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Lu, Jin; Chung, Wan-Fang; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-一月-2018Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C ImplantationBorland, John; Chaung, Shang-Shiun; Tseng, Tseung-Yuen; Lee, Yao-Jen; Joshi, Abhijeet; Basol, Bulent; Kuroi, Takashi; Goodman, Gary; Khapochkima, Nadya; Buyuklimanli, Temel; 交大名義發表; National Chiao Tung University
1-一月-2018Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt AnnealingBorland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhij Eet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel; 交大名義發表; 電機工程學系; National Chiao Tung University; Department of Electrical and Computer Engineering
1-二月-2012Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au NanodotsLee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2017Carbon Nanotube/Nitrogen-Doped Reduced Graphene Oxide Nanocomposites and Their Application in SupercapacitorsYang, Chih-Chieh; Tsai, Meng-Han; Huang, Chun-Wei; Yen, Po-Jen; Pan, Chien-Chung; Wu, Wen-Wei; Wei, Kung-Hwa; Dung, Lan-Rong; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
10-五月-2020Cathodic plasma-induced syntheses of graphene nanosheet/MnO2/WO3 architectures and their use in supercapacitorsHuang, Shih-Yu; Phuoc-Anh Le; Yen, Po-Jen; Lu, Yi-Chun; Sahoo, Sumanta Kumar; Cheng, Hao-Wen; Chiu, Po-Wen; Tseng, Tseung-Yuen; Wei, Kung-Hwa; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
25-一月-2019Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending conditionAluguri, R.; Sailesh, R.; Kumar, D.; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Characteristics of SrTiO(3) Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2009Characteristics of SrTiO3 Insulated Layer in SBT Ferroelectric Thin FilmsChou, Hsiu-Yu; Lee, En-Ko; Lin, Meng-Han; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2013Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistorsChen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chung, Wan-Fang; Chen, Shih-Cheng; Wu, Chang-Pei; Chen, Yi-Hsien; Tai, Ya-Hsiang; Tseng, Tseung-Yuen; Yeh(Huang), Fon-Shan; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
24-二月-2010Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitrideLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-三月-2009Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2014Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching MemoryHuang, Chun-Yang; Ho, Yen-Ting; Hung, Chung-Jung; Tseng, Tseung-Yuen; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
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