國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Wen, TC

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公開日期	標題	作者
15-五月-2001	Activation of p-type GaN in a pure oxygen ambient	Wen, TC; Lee, SC; Lee, WI; Chen, TY; Chan, SH; Tsang, JS; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
2000	Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures	Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
1-三月-2001	Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition	Wen, TC; Lee, WI; Sheu, JK; Chi, GC; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-八月-1999	A dopant-related defect in Te-doped AlInP	Wu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-九月-2001	Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well	Wen, TC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
2001	Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells	Wen, TC; Lee, SC; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
29-四月-2003	Liquid phase deposited SiO2 on GaN	Wu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI; 電子物理學系; Department of Electrophysics
1-四月-2002	Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching	Wen, TC; Lee, WI; Sheu, JK; Chi, GC; 電子物理學系; 資訊工程學系; Department of Electrophysics; Department of Computer Science
15-六月-2000	Phosphorus vacancy as a deep level in AlInP layers	Sung, WJ; Wu, YR; Lee, SC; Wen, TC; Li, TJ; Chang, JT; Lee, WI; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1999	Study of a common deep level in GaN	Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS; 電子物理學系; Department of Electrophysics

顯示 1 到 10 筆資料，總共 10 筆