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公開日期標題作者
十一月-2016AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave ApplicationsLin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
一月-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
一月-2017AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十二月-2018AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As OxidantsWang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
6-六月-2018Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMTLumbantoruan, Franky; Wu, Chia-Hsun; Zheng, Xia-Xi; Singh, Sankalp K.; Dee, Chang-Fu; Majlis, Burhanuddin Y.; Chang, Edward-Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-二月-2012Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si SubstratesHsiao, Yu-Lin; Lu, Lung-Chi; Wu, Chia-Hsun; Chang, Edward Yi; Kuo, Chien-I; Maa, Jer-Shen; Lin, Kung-Liang; Luong, Tien-Tung; Huang, Wei-Ching; Chang, Chia-Hua; Dee, Chang Fu; Majlis, Burhanuddin Yeop; 材料科學與工程學系; 半導體材料與製程設備組; 照明與能源光電研究所; Department of Materials Science and Engineering; Degree Program of Semiconductor Material and Process Equipment; Institute of Lighting and Energy Photonics
21-六月-2018Halbleitervorrichtung und Verfahren zur Herstellung derselbenCHANG EDWARD YI; LIU SHIH-CHIEN; HUANG CHUNG-KAI; WU CHIA-HSUN; HAN PING-CHENG; LIN YUEH-CHIN; HSIEH TING-EN; Chang, Edward Yi; Liu, Shih-Chien; Huang, Chung-Kai; Wu, Chia-Hsun; Han, Ping-Cheng; Lin, Yueh-Chin; Hsieh, Ting-En
1-一月-2019High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage TechniqueHan, Ping-Cheng; Yang, Chih-Yi; Lee, Ming-Wen; Wu, Jui-Sheng; Wu, Chia-Hsun; Chang, Edward Yi; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-六月-2017High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power ApplicationsLin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2018High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device ApplicationsWang, Huan-Chung; Lumbantoruan, Franky Juanda; Hsieh, Ting-En; Wu, Chia-Hsun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-七月-2018High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device ApplicationsWu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-四月-2016Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricHsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
四月-2016Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectricHsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2018InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/DChang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2017InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma TreatmentChang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
四月-2016Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperaturesHuang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-一月-2018Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion ImplantationWu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-八月-2019Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 m Omega center dot cm(2) Specific On-Resistance for Power Device ApplicationsWu, Chia-Hsun; Chen, Jian-You; Han, Ping-Cheng; Lee, Ming-Wen; Yang, Kun-Sheng; Wang, Huan-Chung; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Dee, Chang-Fu; Hamzah, Azrul Azlan; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN HeterostructureHan, Ping-Cheng; Wu, Chia-Hsun; Ho, Yu-Hsuan; Yan, Zong-Zheng; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; International College of Semiconductor Technology
1-二月-2020Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power ApplicationsHuang, Kuan Ning; Lin, Yueh-Chin; Lin, Jia-Ching; Hsu, Chia Chieh; Lee, Jin Hwa; Wu, Chia-Hsun; Yao, Jing Neng; Hsu, Heng-Tung; Nagarajan, Venkatesan; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chien, Chao Hsin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
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