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公開日期標題作者
28-十月-2014Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM applicationChin, Fun-Tat; Lin, Yu-Hsien; You, Hsin-Chiang; Yang, Wen-Luh; Lin, Li-Min; Hsiao, Yu-Ping; Ko, Chum-Min; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-八月-2010Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon NanocrystalsChiang, Tsung-Yu; Wu, Yi-Hong; Ma, William Cheng-Yu; Kuo, Po-Yi; Wang, Kuan-Ti; Liao, Chia-Chun; Yeh, Chi-Ruei; Yang, Wen-Luh; Chao, Tien-Sheng; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2007Fabrication of SONOS-type flash memory with the binary high-k dielectrics by the sol-gel spin coating methodKo, Fu-Hsiang; You, Hsin-Chiang; Chang, Chun-Ming; Yang, Wen-Luh; Lei, Tan-Fu; 材料科學與工程學系奈米科技碩博班; 電子工程學系及電子研究所; Graduate Program of Nanotechnology , Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2013Facile sol-gel preparation of nanocrystal embedded thin film material for memory deviceWu, Chi-Chang; Tsai, Yi-Jen; Liu, Pin-Lin; Yang, Wen-Luh; Ko, Fu-Hsiang; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2011High Performance Cu-doped SiO2 ReRAM by a Novel Chemical Soak MethodChin, Fun-Tat; Yang, Wen-Luh; Chao, Tien-Sheng; Chang, Yuan-Ming; Lin, Li-Min; Liu, Sheng-Hsien; Lin, Chia-Hsiung; 電子物理學系; Department of Electrophysics
1-十月-2013High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment TechniqueLiu, Sheng-Hsien; Yang, Wen-Luh; Lin, Yu-Hsien; Wu, Chi-Chang; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-一月-2013High-Performance Polyimide-Based ReRAM for Nonvolatile Memory ApplicationLiu, Sheng-Hsien; Yang, Wen-Luh; Wu, Chi-Chang; Chao, Tien-Sheng; Ye, Meng-Ru; Su, Yu-Yuan; Wang, Po-Yang; Tsai, Ming-Jui; 電子物理學系; Department of Electrophysics
1-十月-2008High-program/erase-speed SONOS with in situ silicon nanocrystalsChiang, Tsung-Yu; Chao, Tien-Sheng; Wu, Yi-Hong; Yang, Wen-Luh; 電子物理學系; Department of Electrophysics
1-九月-2010High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash MemoryWang, Kuan-Ti; Chao, Tien-Sheng; Wu, Woei-Cherng; Yang, Wen-Luh; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy-Cheng; Wang, Shen-De; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; 電子物理學系; Department of Electrophysics
1-六月-2009High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming MethodWang, Kuan-Ti; Chao, Tien-Sheng; Wu, Woei-Cherng; Chiang, Tsung-Yu; Wu, Yi-Hong; Yang, Wen-Luh; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy-Cheng; Wang, Shen-De; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; 電子物理學系; Department of Electrophysics
2007A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thicknessWu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Ma, Ming-Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; Ko, Joe; 物理研究所; Institute of Physics
1-三月-2007Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memoryWu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng; 電子物理學系; Department of Electrophysics
1-九月-2006Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.Yang, Wen-Luh; Chao, Tien-Sheng; Chen, Shine-China; Yang, Chin-Hao; Peng, Wu-Chin; 電子物理學系; Department of Electrophysics
1-九月-2014Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile MemoryLiu, Sheng-Hsien; Wu, Chi-Chang; Yang, Wen-Luh; Lin, Yu-Hsien; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
2006Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stressLee, Yao-Jen; Fan, Chia-Hao; Yang, Wen-Luh; Lin, Wen-Yan; Huang, Bohr-Ran; Chao, Tien-Sheng; Chuu, D. S.; 物理研究所; Institute of Physics
24-三月-2008Nanocrystallization and interfacial tension of sol-gel derived memoryWu, Chi-Chang; Tsai, Yi-Jen; Chu, Min-Ching; Yang, Shao-Ming; Ko, Fu-Hsiang; Liu, Pin-Lin; Yang, Wen-Luh; You, Hsin-Chiang; 材料科學與工程學系; 材料科學與工程學系奈米科技碩博班; Department of Materials Science and Engineering; Graduate Program of Nanotechnology , Department of Materials Science and Engineering
1-十一月-2007Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memoryYou, Hsin-Chiang; Wu, Chi-Chang; Ko, Fu-Hsiang; Lei, Tan-Fu; Yang, Wen-Luh; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2013Novel Ion Bombardment Technique for Doping Limited Cu Source in SiOx-Based Nonvolatile Switching LayerLiu, Sheng-Hsien; Yang, Wen-Luh; Lin, Yu-Hsien; Wu, Chi-Chang; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
1-十月-2012A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile MemoryLiu, Sheng-Hsien; Yang, Wen-Luh; Wu, Chi-Chang; Chao, Tien-Sheng; 電子物理學系; Department of Electrophysics
2010Novel Sol-gel Derived SONOS-type Nanocrystal MemoryWu, Chi-Chang; You, Hsin-Chiang; Ko, Fu-Hsiang; Yang, Wen-Luh; 材料科學與工程學系奈米科技碩博班; Graduate Program of Nanotechnology , Department of Materials Science and Engineering