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Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
1997Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-1998Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current techniqueWang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1999A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET'sWang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2004An endurance evaluation method for flash EEPROMZous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Aug-1997Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transientChiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current techniqueWang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997Investigation of oxide charge trapping and detrapping in a n-MOSFETWang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2004Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping techniqueGu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodologyZous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFETWang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Sep-2004A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cellYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2005A novel fully CMOS process compatible PREM for SOC applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2006A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programmingTsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2004Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cellTsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2002Role of positive trapped charge in stress-induced leakage current for flash EEPROM devicesWang, TH; Zous, NK; Yeh, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2004Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cellLiu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2-Aug-1999Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxidesZous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFETWang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 19 of 19