| 標題: | 金屬線及空氣低介電常數介電質前瞻性積體技術開發(I) Advanced Integration Techonology of Intermetal and Air Gap Low k Dielectrics for ULSI Application(I) |
| 作者: | 張國明 CHANG KOW-MING 國立交通大學電子工程學系 |
| 公開日期: | 2000 |
| 官方說明文件#: | NSC89-2215-E009-090 |
| URI: | http://hdl.handle.net/11536/100350 https://www.grb.gov.tw/search/planDetail?id=583838&docId=109693 |
| Appears in Collections: | Research Plans |
- 金屬線及空氣低介電常數介電質前瞻性積體技術開發(II) / 張國明;CHANG KOW-MING
- A novel technology to form air gap for ULSI application / Chang, KM;Yang, JY;Chen, LW
- A novel process and thermodynamic mechanisms of air gap formation for ULSI application / Chang, KM;Yang, JY;Chen, LW;Tseng, MH
- 應用於極大型積體電路金屬導線間之低介電常數材料的研究 / 杜賢明;Hsien Ming Tu;羅正忠;孫喜眾;Jen-Chung Lou
- Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization / Cheng, YL;Wang, YL;Liu, CP;Wu, YL;Lo, KY
- Active circuit's under wire bonding I/O, pads in 0.13 mu m eight-level Cu metal, FSG low-K inter-metal dielectric CMOS technology(+) / Chou, KY;Chen, MJ
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