HtLaON n-MOSFETs using a low work function HfSix gate

Abstract

At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm(2)/(V center dot s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-degrees C rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines.