| 標題: | 極紫外光(EUV)微影技術從光源建造、光罩、材料、製程到奈米元件可靠度研究(III) Investigations on Extreme Ultraviolet Lithography (EUVL) from Beamline Construction, Masks, Materials, Processes, to Reliability of Nano Devices (III) |
| 作者: | 黃遠東 HUANG YANG-TUNG 國立交通大學電子工程學系及電子研究所 |
| 關鍵字: | 次世代微影技術;極紫外光微影技術(EUVL);半導體製程;同步輻射光源;EUVL檢測技術;Next generation lithography (NGL);Extreme UV lithography (EUVL);Semiconductor;Synchrotron radiation;EUV metrology technology |
| 公開日期: | 2010 |
| 官方說明文件#: | NSC99-2120-M009-004 |
| URI: | http://hdl.handle.net/11536/100667 https://www.grb.gov.tw/search/planDetail?id=2147801&docId=345725 |
| Appears in Collections: | Research Plans |
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