標題: | Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode |
作者: | Cheng, Chun-Hu Chiang, Kuo-Cheng Pan, Han-Chang Hsiao, Chien-Nan Chou, Chang-Pin Mcalister, Sean P. Chin, Albert 機械工程學系 電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | reliability;high work function;MIM;TiHfO;Ni |
公開日期: | 1-十一月-2007 |
摘要: | We have studied the reliability of high-K (K similar to 49) TixHf1-xO (x similar to 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction. |
URI: | http://dx.doi.org/10.1143/JJAP.46.7300 http://hdl.handle.net/11536/10148 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.46.7300 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 46 |
Issue: | 11 |
起始頁: | 7300 |
結束頁: | 7302 |
顯示於類別: | 期刊論文 |