利用氘化及氮化處理製備高可靠性薄閘氧化層深次微米NMOS元件

標題:	利用氘化及氮化處理製備高可靠性薄閘氧化層深次微米NMOS元件 Highly Reliable Thin Gate Oxide Deep-Submicron N-MOSFET by Deuterium and Nitrogen Treatments
作者:	莊紹勳 Chung Steve S 交通大學電子工程系
關鍵字:	金氧半導體;熱載子可靠性;深次微米;界面特性化;氮化閘極氧化層;氘氣回火製程;MOS;Hot carrier reliability;Deep submicrometer;Interface characterization;Nitrided gate oxide;Deuterium annealing
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-045
URI:	http://hdl.handle.net/11536/101648 https://www.grb.gov.tw/search/planDetail?id=542146&docId=99594
Appears in Collections:	Research Plans

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