標題: 奈米點記憶體元件之製作與物理機制研究(II)
Physical Mechanism Study and Fabrication of Nanocrystal for Memory Device(II)
作者: 施敏
SZE SIMON MIN
國立交通大學電子工程學系及電子研究所
公開日期: 2009
官方說明文件#: NSC98-2221-E009-001
URI: http://hdl.handle.net/11536/101858
https://www.grb.gov.tw/search/planDetail?id=1909204&docId=316576
Appears in Collections:Research Plans


Files in This Item:

  1. 982221E009001.PDF

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.